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| STP12NB30 STP12NB30FP N - CHANNEL ENHANCEMENT MODE PowerMESHTM MOSFET PRELIMINARY DATA TYPE STP3NB60 STP12NB30F P s s s s s V DSS 300 V 300 V R DS(on) < 0.40 < 0.40 ID 12A 6.5 A TYPICAL RDS(on) = 0.34 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 2 3 1 2 3 DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s UNINTERRUPTIBLE POWER SUPPLY(UPS) s DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID IDM (*) P t ot dv/dt(1) V ISO T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating F actor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage T emperature Max. O perating Junction Temperature o o TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM Value ST P12NB30 ST P12NB30FP 300 300 30 12 7.5 48 125 1 5.5 -65 to 150 150 6.5 4 48 35 0.28 5.5 2000 Uni t V V V A A A W W/ o C V/ ns V o o C C 1/6 January 1998 STP12NB30/FP THERMAL DATA TO-220 R t hj-ca se R t hj- amb R thc- si nk Tl Thermal Resistance Junction-case Max 1 62.5 0.5 300 TO220-F P 3.57 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symb ol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, < 1%) Single Pulse Avalanche Energy o (starting Tj = 25 C, I D = IAR , VDD = 50 V) Max Valu e 12 250 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symb ol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Cond ition s I D = 250 A V GS = 0 Min. 300 1 10 100 Typ . Max. Un it V A A nA Zero G ate Voltage V DS = Max Rating Drain Current (VGS = 0) V DS = Max Rating Gate-body Leakage Current (V DS = 0) V GS = 30 V T c = 125 oC ON () Symb ol V GS(th) R DS( on) ID(o n) Parameter Gate Threshold Voltage V DS = VGS Test Cond ition s ID = 250 A ID = 6 A 12 Min. 3 Typ . 4 0.34 Max. 5 0.4 Un it V A Static Drain-source On V GS = 10V Resistance On State Drain Current V DS > I D(on) x R DS(on) max V GS = 10 V DYNAMIC Symb ol g fs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse T ransfer Capacitance Test Cond ition s V DS > I D(on) x R DS(on) max V DS = 25 V f = 1 MHz ID = 6 A VGS = 0 Min. 3 1000 200 25 1400 270 35 Typ . Max. Un it S pF pF pF 2/6 STP12NB30/FP ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Cond ition s V DD = 150 V R G = 4.7 V DD =240 V ID = 6 A VGS = 10 V ID =12A V GS = 10 V Min. Typ . 20 10 29 11 12 Max. 28 14 40 Un it ns ns nC nC nC SWITCHING OFF Symb ol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Cond ition s V DD = 240 V I D =12 A R G = 4.7 V GS = 10 V Min. Typ . 10 10 20 Max. 14 14 28 Un it ns ns ns SOURCE DRAIN DIODE Symb ol I SD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 12 A V GS = 0 250 2 16 Test Cond ition s Min. Typ . Max. 12 48 1.5 Un it A A V ns C A I SD = 12 A di/dt = 100 A/s o T j = 150 C V DD = 100 V () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area 3/6 STP12NB30/FP TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 E mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 MIN. 0.173 0.048 0.094 4.40 1.23 2.40 inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151 A C D1 L2 F1 D G1 Dia. F2 F L5 L7 L6 L9 L4 G 4/6 H2 P011C STP12NB30/FP TO-220FP MECHANICAL DATA DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 O 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 A B L3 L6 L7 F1 F D G1 E H F2 123 L2 L4 G 5/6 STP12NB30/FP Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 6/6 |
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